128K x 16, 55ns, 3.3V 128K x 8, 2.7-5.5V, Ind 128K x 8, 35ns, 5V 128K x 8, 45ns 128K x 8, 5.0V 128K x 8, 55ns, 3.3V 128K x 8, 5V 128Kx8 128Mx16 128x8 16K 16Kx8 1M x 16 1M x 8 1M х 16, 2.5/3.3V 256K x 16 256K x 16 OTP 256K x 16, 2.5/3.3V 256K x 16, 55ns, 3.3V 256K x 16, 5V 2Kx8 2M x 8 32K x 8 32K x 8, 45ns, 5V 32K x 8, 55 ns 32K х 8, 5V 32Kx8 32Kх8 4Mx16 512 х 8, 5.0V 512K x 16, 2.5/3.3V 512K x 16, 3.3V, 10 ns 512K x 16, 55ns, 3.3V 512K x 8, 2.5/3.3V 512K x 8, 55ns, 3.3V 512K x 8, 55ns, Ind 512Kx16, 45ns 512Kx8, 45ns 512Kx8, 55ns 512x8 64K x 16 OTP 64K x 16, 3.3V, 10 ns 64K x 8 64K х 16, 3,3V 64K х 16, 5V 64Kx8 8-Mbit (512 K x 16) 3 V 55 ns 8Kx8 8К x 8

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Корпус

100-TQFP (14x14) 153-MBGA (8x8)

16-SO 16-SOP 28-PCDIP, CAPHATВ® 28-PDIP 28-SOP 28-TSOP I 32-CDIP Frit Seal with Window 32-DIP 32-SOP 36-VFBGA (6x8) 40-PDIP 44-TSOP II 44-TSOP2 (10.2x18.4) 48-miniBGA (6x8) 48-TFBGA (6x8) 48-TFBGA (9x11) 48-TSOP 48-TSOP (12x20) 48-TSOP I 48-TSOP I (12x20) 54-TSOP II 54-VFBGA (8x8) 6-TSOC 6-UCSPR (3x3) 60-FBGA (8x10) 60-FBGA (8x12.5) 60-FBGA (9x11.5) 60-TFBGA (8x10) 60-TWBGA (10.5x8) 60-VFBGA (8x9) 66-TSOP 78-FBGA (8x10.5) 8-DFN-EP, Small Flag (5x6) 8-MSOP 8-PDIP 8-SO 8-SOIC N 8-TDFN (4x4.5) 8-TDFN (5x6) 8-TSSOP 8-UDFN (2x2.2) 8-UDFN (2x3) 8-VDFPN (6x5) (MLP8) 8-VFQFPN (6x5) 8-WLCSP 84-FBGA 84-FBGA (8x12.5) 84-FBGA (9x12.5) 86-TSOP II 90-TFBGA (8x13) 90-VFBGA (8x13) 96-FBGA (8x14) 96-TWBGA (9x13) CDIP28 CDIP32 DFN8 DFN8-(2x3) DIP-8 DIP24 DIP28 DIP32 FBGA60-(8x12.5) FBGA64-(11x13) FBGA84-(8x12.5) FBGA96 FBGA96-(8x14) FBGA96-(9x14) MLP8-(2x3) MSOP8 PCDIP24, CAPHATВ® PLCC32 PLCC44 SO-8 SO14 SO16W SO28 SO28W SO32 SO32W SO8W SOIC14 SOIC16 SOIC16W SOIC8 SOIC8N SOIJ-8 SOIJ8 SOJ28 SOJ32 SOJ36 SOJ44 SOP-8 SOP28 SOP32 SOP8 SOT-223 SOT-23 SOT-23-5 SOT-23-6 SOT23-3 SSOP48 sTSOP32-I TDFN8-(2x3) TFBGA48 TFBGA48-(6x8) TFBGA54-(8x8) TFBGA90-(8x13) TO-92_formed_leads TO92-3 TQFP100 TQFP100-(14x14) TQFP100-(14x20) TSOC6 TSOP-54 TSOP-54-II TSOP-56 TSOP28 TSOP28-I TSOP32 TSOP32-I TSOP32-II TSOP44 TSOP44-II TSOP48 TSOP48-I TSOP86-II TSOT-23-5 TSSOP56 TSSOP8 TWBGA84-(8x12.5) U-PDFN-8 UDFN8(2x3) UFDFPN8-(2x3) USON8 VDFPN8 VFBGA48-(6x8) VFBGA60 VFBGA63 VFBGA84 VFBGA90 VFBGA96 VFQFPN8 WDFN8 WPDFN8 WSON-8 (2x2) WSON-8 (5x6) WSON-8 (6x8) WSON-8 (8x6)

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Быстродействие

100kHz, 400kHz 100kHz, 400kHz, 1MHz

100MHz 104MHz 10MHz 10ns 12ns 15ns 166MHz 16MHz 1MHz 20MHz 20ns 25ns 2MHz 35ns 3MHz 400kHz 400kHz, 1MHz 45ns 50MHz 55ns 5MHz 5MHz, 10MHz, 20MHz 70MHz 70ns 75MHz 85MHz 90ns

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Интерфейс

1-Wire Serial IВІC, 2-Wire Serial

Microwire, 3-Wire Serial Parallel SPI Serial SPI, RapidS SQI, SPI

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Объем и организация памяти

128K (16K x 8) 16K (2K x 8)

16K (2K x 8, 1K x 16) 16M (1M x 16) 16M (2M x 8, 1M x 16) 1K (128 x 8 or 64 x 16) 1K (128 x 8) 1K (256 x 4) 1K (64 x 16) 1M (128K x 8) 1M (64K x 16) 1M-bit 128K x 8 256K (16K x 16) 256K (32K x 8) 2K (128 x 16) 2K (256 x 8) 2K (256 x 8, 128 x 16) 2K-bit 256 x 8 2M (128K x 16) 2M (256K x 8) 32K (4K x 8) 4K (256 x 16) 4K (512 x 8 or 256 x 16) 4K (512 x 8) 4M (256K x 16) 4M (512K x 8) 512K (32K x 16) 512K (64K x 8) 64K (8K x 8) 8K (1K x 8) 8K (1K x 8, 512 x 16) 8M (1M x 8) 8M (512K x 16) 9M (256K x 36)

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Тип памяти

DataFLASH EEPROM

EPROM FLASH FLASH - NAND FLASH - NAND (SLC) FLASH - NOR SRAM - Asynchronous SRAM - Dual Port, Asynchronous SRAM - Synchronous

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Объем памяти

128M (16M x 8) 128M-bit

128Mbit 16 КБит 16M (1M x 16) 16M (2M x 8) 16M (4096 pages x 528 bytes) 16M-bit 16Mbit 1G (128M x 8) 1G-bit 1M (128K x 8) 1Mbit 256 КБит 256M (32M x 8) 2G (128M x 16) 2G (256M x 8) 2M (1024 pages x 264 bytes) 2M (256K x 8) 2M-bit 2Мb 32M (4M x 8) 32M (8192 pages x 528 bytes) 32Mb 32Mbit 4G (512M x 8) 4M (2048 pages x 264 bytes) 4M (512K x 8) 4M-bit 512 КБит 64 КБит 64M (8M x 8) 64M-bit 64Mbit 8G (1G x 8) 8M (1M x 8) 8M (4096 pages x 256 bytes) 8M (4096 pages x 264 bytes) 8M-bit 8Mb

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Объем памяти/структура

16K (2K x 8) 1M (128K x 8)

256K (32K x 8) 2M (256K x 8) 4K (512 x 8) 512K (64K x 8) 64K (8K x 8)

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Рабочая частота/быстродействие

1MHz 20MHz

3.4MHz 40MHz 60ns 70ns

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Формат памяти

RAM

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Производитель

Alliance Memory. Inc APMEMORY

Everspin Technologies Fujitsu Microelectronics GigaDevice Semiconductor Inc Holtek Hynix Seniconductors Inc. Infineon Technologies Integrated Device Technology Integrated Silicon Solution, Inc KIOXIA Macronix International Co., Ltd Maxim Microchip Technology Inc. Micron ON Semiconductor Puya Semiconductor Co., Ltd. Renesas Electronics Corp. RENESAS Electronics Corp. Samsung Semiconductor Shanghai Belling ST Microelectronics Winbond Zbit Semiconductor inc. Zetta Device Technology, Ltd

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Напряжение

1.65 V ~ 3.6 V 1.7 V ~ 3.6 V

1.7 V ~ 5.5 V 1.8 V ~ 5.5 V 1.8V/2.5V/3.3V 2 V ~ 3.6 V 2.2 V ~ 3.6 V 2.3 V ~ 3.6 V 2.4 V ~ 3.6 V 2.5 V ~ 3.6 V 2.5 V ~ 5.5 V 2.5V/3.3V 2.5V/3.3V/5V 2.5V/3V/3.3V 2.7 V ~ 3. 2.7 V ~ 3.6 V 2.7 V ~ 3.65 V 2.7 V ~ 5.5 V 2.7-3.6V 2.7V 3 V ~ 3.6 V 3.135 V ~ 3.6 V 3.3V 3.6V 3V 3V/3.3V 4.5 V ~ 5.5 V 4.75 V ~ 5.25 V

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MT41J128M16JT-125:K - Динамическое ОЗУ DDR3 2Гбит 96FBGA

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